Exploitation of a self-limiting process for reproducible formation of ultrathin Ni 1−x Pt x silicide films

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni 1−x Pt x silicide films

This letter reports on a process scheme to obtain highly reproducible Ni 1−x Pt x silicide films of 3–6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rap...

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Bibliographic Details
Published in:Applied physics letters Vol. 97; no. 25; p. 252108
Main Authors: Zhang, Zhen, Yang, Bin, Zhu, Yu, Gaudet, Simon, Rossnagel, Steve, Kellock, Andrew J., Ozcan, Ahmet, Murray, Conal, Desjardins, Patrick, Zhang, Shi-Li, Jordan-Sweet, Jean, Lavoie, Christian
Format: Journal Article
Language:English
Published: 2010
Subjects:
TECHNOLOGY
TEKNIKVETENSKAP
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Summary:This letter reports on a process scheme to obtain highly reproducible Ni 1−x Pt x silicide films of 3–6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction.
ISSN:1077-3118
0003-6951
DOI:10.1063/1.3529459