Transport and angular resolved photoemission measurements of the electronic properties of In 2 O 3 bulk single crystals
High quality In 2 O 3 single crystals of bcc structure were grown by chemical vapour transport. The temperature dependence of resistivity, Hall constant, and mobility yielded an electron density of n=1.3×10 19 cm −3 . The transport properties showed characteristics best describable by the degenerate...
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| Published in: | Applied physics letters Vol. 100; no. 21; pp. 212108 - 212108-5 |
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| Main Authors: | , , , , , |
| Format: | Journal Article |
| Published: |
American Institute of Physics
22-05-2012
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| Online Access: | Get full text |
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| Summary: | High quality In
2
O
3
single crystals of bcc structure were grown by chemical vapour transport. The temperature dependence of resistivity, Hall constant, and mobility yielded an electron density of n=1.3×10
19
cm
−3
. The transport properties showed characteristics best describable by the degenerate semiconductor model. The crystals were additionally investigated by high resolution angular resolved photoelectron spectroscopy (ARPES). Emission from the valence band and the partially filled conduction band at the Γ point yielded a direct bandgap of (2.7±0.1)eV. The partially filled conduction band furthermore enabled the determination of its three dimensional Fermi surface and the effective masses m
*
by ARPES. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.4719665 |