High-gain integrated inverters based on ZnO metal-semiconductorfield-effect transistor technology

• Published in: Applied physics letters Vol. 96; no. 11; pp. 113502 - 113502-3
• Main Authors: Frenzel, H., Schein, F., Lajn, A., von Wenckstern, H., Grundmann, M.
• Format: Journal Article
• Published: American Institute of Physics 15-03-2010
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.3339876

We report on the design and fabrication of ZnO-based integrated inverters consisting of normally-on metal-semiconductor field-effect transistors and
Ag
x
O
Schottky diodes as level shifters. The inverters show high gain values up to 197 at 3 V operating voltage and low uncertainty levels in the range of 0.13 V. The influence of the level shifter and the channel material/thickness on the performance of the inverters has been investigated. Using
Zn
0.997
Mg
0.003
O
for the channel thin film leads to high reproducibility (90%) of the devices. A logic NOR-gate has been implemented showing the possibility to fabricate a complete logic.