General analytical Poisson solution for undoped generic two-gatedmetal-oxide-semiconductor field-effect transistors

• Published in: Applied physics letters Vol. 90; no. 1; pp. 012110 - 012110-3
• Main Authors: Shangguan, W. Z., Au Yeung, T. C., Zhu, Z. M., Zhou, X.
• Format: Journal Article
• Published: American Institute of Physics 03-01-2007
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2428414

We present a general analytical solution to the Poisson equation for undoped semi-conductors. This general Poisson solution is then applied to generic dual-gate metal-oxide- semiconductor field-effect transistors (MOSFETs), unifying different types including silicon-on-insulator, and symmetric and asymmetric double-gate MOSFETs. Newton-Raphson (NR) algorithm is called to solve the resulting surface-potential equation. An exact solution is proposed making the NR algorithm computationally very efficient. While the universal initial guess can be used as an approximate solution for fast evaluation, the iterative results by NR algorithm are useful for benchmark tests.