High-sensitivity hybrid MoSe/AgInGaS quantum dot heterojunction photodetector

• Published in: RSC advances Vol. 14; no. 3; pp. 1962 - 1969
• Main Authors: Zhao, Xunjia, Wang, Xusheng, Jia, Runmeng, Lin, Yuhai, Guo, TingTing, Wu, Linxiang, Hu, Xudong, Zhao, Tong, Yan, Danni, zhu, Lin, Chen, Zhanyang, Xu, Xinsen, Chen, Xiang, Song, Xiufeng
• Format: Journal Article
• Published: 09-01-2024
• ISSN: 2046-2069
• DOI: 10.1039/d3ra07240a

Zero-dimensional (0D)-two-dimensional (2D) hybrid photodetectors have received widespread attention due to their outstanding photoelectric performances. However, these devices with high performances mainly employ quantum dots that contain toxic elements as sensitizing layers, which restricts their practical applications. In this work, we used eco-friendly AgInGaS quantum dots (AIGS-QDs) as a highly light-absorbing layer and molybdenum diselenide (MoSe
2
) as a charge transfer layer to construct a 0D-2D hybrid photodetector. Notably, we observed that MoSe
2
strongly quenches the photoluminescence (PL) of AIGS-QDs and decreases the decay time of PL in the MoSe
2
/AIGS-QDs heterojunction. The MoSe
2
/AIGS-QDs hybrid photodetector demonstrates a responsivity of 14.3 A W
−1
and a high detectivity of 6.4 × 10
11
Jones. Moreover, the detectivity of the hybrid phototransistor is significantly enhanced by more than three times compared with that of the MoSe
2
photodetector. Our work suggests that 0D-2D hybrid photodetectors with multiplex I-III-VI QDs provide promising potential for future high-sensitivity photodetectors.
A high-performance hybrid photodetector was fabricated from AgInGaS quantum dots and MoSe
2
, which facilitates cooperative light absorption and charge transfer to enhance the responsivity and detectivity.