Effect of Manganese Alloying on Infrared Detectors Made of Pb 1-x Mn x Te/CdTe Multilayer Composite

• Published in: Materials Vol. 16; no. 12
• Main Authors: Chusnutdinow, Sergij, Kazakov, Alexander, Jakieła, Rafał, Szot, Michał, Schreyeck, Steffen, Brunner, Karl, Karczewski, Grzegorz
• Format: Journal Article
• Language: English
• Published: Switzerland 06-06-2023
• Subjects: molecular beam epitaxy; photoresistors; infrared photodetectors; PbMnTe; multilayers; CdTe
• ISSN: 1996-1944; 1996-1944

The properties of Pb
Mn
Te/CdTe multilayer composite grown by molecular beam epitaxy on a GaAs substrate were studied. The study included morphological characterization by X-ray diffraction, scanning electron microscopy, secondary ion mass spectroscopy, as well as electron transport and optical spectroscopy measurements. The main focus of the study was on the sensing properties of photoresistors made of Pb
Mn
Te/CdTe in the infrared spectral region. It was shown that the presence of Mn in the Pb
Mn
Te conductive layers shifted the cut-off wavelength toward blue and weakened the spectral sensitivity of the photoresistors. The first effect was due to an increase in the energy gap of Pb
Mn
Te with an increase in Mn concentration, and the second was due to a pronounced deterioration in the crystal quality of the multilayers owing to the presence of Mn atoms, as shown by the morphological analysis.