Enhanced polarization of electron-poor/rich micro-centers over nZVCu-Cu(II)-rGO for pollutant removal with H 2 O 2

• Published in: Journal of hazardous materials Vol. 383; p. 121182
• Main Authors: Lyu, Lai, Cao, Wenrui, Yu, Guangfei, Yan, Dengbiao, Deng, Kanglan, Lu, Chao, Hu, Chun
• Format: Journal Article
• Language: English
• Published: Netherlands 05-02-2020
• Subjects: Nanoscale zero-valent copper; Graphene; Electron-poor/rich centers; Fenton-like process; Pollutant conversion
• ISSN: 1873-3336

Nanoscale zero-valent copper combined with Cu(II)-doped reduced graphene oxide hybrid (nZVC-Cu(II)-rGO) is synthesized through an annealing reduction process, and it shows very high activity and efficiency for removing refractory organic compounds with H
O
. The conversion rate for the organic pollutant in this system is ∼77 and ∼13 times higher than that in the graphene oxide (GO) and reduced graphene oxide (rGO) systems, respectively. The characterization shows that nanoscale Cu(0) and Cu(II) are generated on the rGO surface during the annealing process and they are accompanied by the COCu bonding formation between the rGO substrate and the Cu(II) species in nZVC-Cu(II)-rGO, which induces cation-π interactions on the surface, resulting in the reinforced electron-rich micro-centers formation around the nZVC-enhanced Cu(II) species and electron-poor micro-centers on rGO-aromatic rings. The generation of nanoscale Cu(0) consolidates the polarization of the dual reaction micro-centers and greatly accelerates the electron transfer of the system, thus promoting H
O
reduction to OH in the electron-rich micro-centers. Pollutants can obviously replace H
O
as the electron donors of the system and are efficiently oxidized and degraded in the electron-poor micro-centers, with their own electron energy being fully utilized in the nZVC-Cu(II)-rGO Fenton-like system.