Guiding effects in Nd:YVO sub(4) microchip lasers operating well above threshold

Guiding effects in Nd:YVO sub(4) microchip lasers operating well above threshold

Guiding of the transverse mode in Nd:YVO sub(4) microchip lasers is examined both experimentally and theoretically at pump powers well above threshold. It is found that thermal changes in the cavity geometry induced by intense diode pumping can be well understood using a simple model. However, an un...

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Bibliographic Details
Published in:IEEE journal of quantum electronics Vol. 35; no. 4
Main Authors: Kemp, A J, Conroy, R S, Friel, G J, Sinclair, B D
Format: Journal Article
Language:English
Published: 01-01-1999
Subjects:
Beams (radiation)
Diodes
Holes
Lasers
Pumping
Pumps
Quantum electronics
Thresholds
Online Access:Get full text
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Summary:Guiding of the transverse mode in Nd:YVO sub(4) microchip lasers is examined both experimentally and theoretically at pump powers well above threshold. It is found that thermal changes in the cavity geometry induced by intense diode pumping can be well understood using a simple model. However, an understanding of these effects is not sufficient to explain the nature of the transverse mode. Gain-related guiding effects are found to play an important role even at pump powers well above threshold. For a 0.5-mm-thick microchip laser, a difference of around 30% is observed between the minimum beam waist expected due to thermal guiding and the measured beam waist. The gain-related effects are described theoretically and their importance is demonstrated experimentally
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ObjectType-Feature-1
ISSN:0018-9197
DOI:10.1109/3.753673