Run to run control in tungsten chemical vapor deposition using H sub(2)/WF sub(6) at low pressures

Wafer state (thickness) control in the tungsten chemical vapor deposition (CVD) process was achieved by run to run (RtR)control with an Intermediate Model Control (IMC) approach. A stable wafer thickness metrology using in situ mass spectrometry was established preceeding the control implementation....

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Bibliographic Details
Published in:	Journal of vacuum science & technology. B, Microelectronics processing and phenomena Vol. 19; no. 5; pp. 1931 - 1941
Main Authors:	Sreenivasan, R, Gougousi, T, Xu, Y, Kidder J, Jr, Zafiriou, E, Rubloff, G W
Format:	Journal Article
Language:	English
Published:	01-01-2001
Subjects:	Algorithms Chemical vapor deposition Ions Mass spectrometry Temperature Thickness measurement Tungsten
Online Access:	Get full text
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Summary:	Wafer state (thickness) control in the tungsten chemical vapor deposition (CVD) process was achieved by run to run (RtR)control with an Intermediate Model Control (IMC) approach. A stable wafer thickness metrology using in situ mass spectrometry was established preceeding the control implementation. It was observed that in situ chemical sensing and mass spectrometry provided the basis for wafer state metrology required to achieve RtR control.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1
ISSN:	0734-211X