Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi- V rmTh Engineering
Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (V rmTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fab...
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| Published in: | IEEE transactions on electron devices Vol. 57; no. 3; pp. 626 - 631 |
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| Main Authors: | , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-03-2010
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| Online Access: | Get full text |
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| Abstract | Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (V rmTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering 640 mV/V), nearly symmetric V rmTh, low T rminv (61.4 nm), and high I rmonUnknown character(6 [/mspa ce] hbox780Unknown characterkA[ mo]/km) for N/PMOS without any intentional strain enhancement. |
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| AbstractList | Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (V rmTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering 640 mV/V), nearly symmetric V rmTh, low T rminv (61.4 nm), and high I rmonUnknown character(6 [/mspa ce] hbox780Unknown characterkA[ mo]/km) for N/PMOS without any intentional strain enhancement. |
| Author | Young, Chadwin D Hussain, Muhammad Mustafa Tseng, Hsing-Huang Jammy, Rajarao Harris, H Rusty Smith, Casey E |
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| Title | Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi- V rmTh Engineering |
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