Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi- V rmTh Engineering

Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi- V rmTh Engineering

Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (V rmTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fab...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 57; no. 3; pp. 626 - 631
Main Authors: Hussain, Muhammad Mustafa, Smith, Casey E, Harris, H Rusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao
Format: Journal Article
Language:English
Published: 01-03-2010
Online Access:Get full text
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Summary:Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (V rmTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering 640 mV/V), nearly symmetric V rmTh, low T rminv (61.4 nm), and high I rmonUnknown character(6 [/mspa ce] hbox780Unknown characterkA[ mo]/km) for N/PMOS without any intentional strain enhancement.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0018-9383
DOI:10.1109/TED.2009.2039097