Strain relaxation mechanism in the Si-SiO(2) system and its influence on the interface properties

Strain relaxation mechanism in the Si-SiO(2) system and its influence on the interface properties

The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depended on the oxidation condition: temperature, cooling rate, oxide thickness. In the Si-...

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Bibliographic Details
Published in:Physica. B, Condensed matter Vol. 404; no. 23-24; pp. 5153 - 5155
Main Authors: Kropman, D, Mellikov, E, Oepik, A, Lott, K, Volobueva, O, Kaerner, T, Heinmaa, I, Laas, T, Medvid, A
Format: Journal Article
Language:English
Published: 15-12-2009
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Summary:The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depended on the oxidation condition: temperature, cooling rate, oxide thickness. In the Si-SiO(2)-Si(3)N(4) system the stresses relaxation by the strain occur due to the opposite sign of the thermal expansion coefficient of SiO(2) and Si(3)N(4) on Si. Laser irradiation allows to modify the system stresses.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0921-4526
DOI:10.1016/j.physb.2009.08.279