High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for @@inor@-type Flash Memory

High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for @@inor@-type Flash Memory

A dopant-segregated Schottky barrier (DSSB) FinFET silicon-oxide-nitride-oxide-silicon (SONOS) for nor- type flash memory is successfully demonstrated. Compared with a conventional FinFET SONOS device, the DSSB FinFET SONOS device exhibits high-speed programming at low voltage. The sharp dopant-segr...

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Bibliographic Details
Published in:IEEE electron device letters Vol. 30; no. 3; pp. 265 - 268
Main Authors: Choi, Sung-Jin, Han, Jin-Woo, Jang, Moon-Gyu, Kim, Jin Soo, Kim, Kwang Hee, Lee, Gi Sung, Oh, Jae Sub, Song, Myeong Ho, Park, Yun Chang, Kim, Jeoung Woo, Choi, Yang-Kyu
Format: Journal Article
Language:English
Published: 01-03-2009
Online Access:Get full text
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Summary:A dopant-segregated Schottky barrier (DSSB) FinFET silicon-oxide-nitride-oxide-silicon (SONOS) for nor- type flash memory is successfully demonstrated. Compared with a conventional FinFET SONOS device, the DSSB FinFET SONOS device exhibits high-speed programming at low voltage. The sharp dopant-segregated Schottky contact at the source side can generate hot electrons, and it can be used to provide high injection efficiency at low voltage without any constraint on the choice of the proper gate and drain voltage. The DSSB FinFET SONOS device is therefore a promising candidate for nor-type flash memory with high-speed and low-power programming.
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ISSN:0741-3106
DOI:10.1109/LED.2008.2010720