High brightness LEDs for general lighting applications Using the new ThinGaNTM-Technology
During the last years GaN-technology has proven to fulfill the requirements of solid state lighting. Lighting requirements are mainly driven by brightness, operation voltage and lifetime. Brigthness is determined by internal efficiency as well as extraction efficiency whereas the ohmic losses determ...
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| Published in: | Physica status solidi. A, Applied research Vol. 201; no. 12; pp. 2736 - 2739 |
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| Main Authors: | , , , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-09-2004
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| Online Access: | Get full text |
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| Summary: | During the last years GaN-technology has proven to fulfill the requirements of solid state lighting. Lighting requirements are mainly driven by brightness, operation voltage and lifetime. Brigthness is determined by internal efficiency as well as extraction efficiency whereas the ohmic losses determining the operating voltage are dominated by series resistance and contact resistance. Both, brightness and voltage, strongly depend on the device structure as well as the chip design. SiC based [1, 2] as well as Sapphire based LEDs [3] have proven their capability for high brightness devices, still suffering from various compromises such as cost, ESD-stability, high series resistance etc. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1 |
| ISSN: | 0031-8965 |
| DOI: | 10.1002/pssa.200405119 |