Characterization of thick HYPE GaN films
The morphology of the top surface for HVPE GaN layers grown on a MOCVD GaN template with a thin LT-AlN interlayer was investigated. This surface is characterized by the formation of numerous hillocks associated with screw dislocations or nanopipes. Their size is large and may reach more than 1 mm. T...
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| Published in: | Superlattices and microstructures Vol. 36; no. 4-6; pp. 417 - 424 |
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| Main Authors: | , , , , , , , |
| Format: | Journal Article |
| Language: | English |
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01-10-2004
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| Abstract | The morphology of the top surface for HVPE GaN layers grown on a MOCVD GaN template with a thin LT-AlN interlayer was investigated. This surface is characterized by the formation of numerous hillocks associated with screw dislocations or nanopipes. Their size is large and may reach more than 1 mm. The rocking curves of the 002 and 102 reflections correspond to a relaxed layer. The HREM images of the as-deposited and annealed interlayers show a perfect atomic structure with a very abrupt AlN/HVPE GaN interface. Thus, the deposition of the LT-AlN layer has promoted the growth of an HYPE layer with an excellent crystalline quality. |
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| AbstractList | The morphology of the top surface for HVPE GaN layers grown on a MOCVD GaN template with a thin LT-AlN interlayer was investigated. This surface is characterized by the formation of numerous hillocks associated with screw dislocations or nanopipes. Their size is large and may reach more than 1 mm. The rocking curves of the 002 and 102 reflections correspond to a relaxed layer. The HREM images of the as-deposited and annealed interlayers show a perfect atomic structure with a very abrupt AlN/HVPE GaN interface. Thus, the deposition of the LT-AlN layer has promoted the growth of an HYPE layer with an excellent crystalline quality. |
| Author | Ruterana, Pierre Ye, Haohua Li, Aizhen Yu, Guanghui Lei, Benliang Chen, Jun Nouet, Gerard Qi, Ming |
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| Title | Characterization of thick HYPE GaN films |
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