Characterization of thick HYPE GaN films

• Published in: Superlattices and microstructures Vol. 36; no. 4-6; pp. 417 - 424
• Main Authors: Nouet, Gerard, Ruterana, Pierre, Chen, Jun, Lei, Benliang, Ye, Haohua, Yu, Guanghui, Qi, Ming, Li, Aizhen
• Format: Journal Article
• Language: English
• Published: 01-10-2004
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2004.09.005

The morphology of the top surface for HVPE GaN layers grown on a MOCVD GaN template with a thin LT-AlN interlayer was investigated. This surface is characterized by the formation of numerous hillocks associated with screw dislocations or nanopipes. Their size is large and may reach more than 1 mm. The rocking curves of the 002 and 102 reflections correspond to a relaxed layer. The HREM images of the as-deposited and annealed interlayers show a perfect atomic structure with a very abrupt AlN/HVPE GaN interface. Thus, the deposition of the LT-AlN layer has promoted the growth of an HYPE layer with an excellent crystalline quality.