Surface and bulk structural changes in InP single crystals induced by 350 Mev Au ion irradiation
InP (001) wafers were irradiated at room temperature and at liquid nitrogen temperature with swift Au ions. The bulk and near surface structure was investigated by means of X-ray grazing incidence diffraction and measurements at the (002) Bragg reflection. While irradiation at room temperature with...
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| Published in: | Physica. B, Condensed matter Vol. 357; no. 1-2; pp. 118 - 121 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
28-02-2005
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| Online Access: | Get full text |
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| Summary: | InP (001) wafers were irradiated at room temperature and at liquid nitrogen temperature with swift Au ions. The bulk and near surface structure was investigated by means of X-ray grazing incidence diffraction and measurements at the (002) Bragg reflection. While irradiation at room temperature with 350 MeV Au ions induced amorphization at a fluence of phi(sub t) = 1 x 10 exp 13 Au/sq cm, cooling to liquid nitrogen temperature during irradiation reduces the defect generation. A threshold value for complete bulk amorphization of phi(sub t) = 6 x 10 exp 12 Au/sq cm was observed. The near surface lattice structure is less affected by the irradiation than the bulk. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2004.11.038[1]W.Wesch,O. |