15-mu m 128x 128 GaAs/Al(x)Ga(1-x)Asquantum well infrared photodetector focal plane array camera

15-mu m 128x 128 GaAs/Al(x)Ga(1-x)Asquantum well infrared photodetector focal plane array camera

In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/Al(x)Ga(1-x)As quantum well infrared photodetectors (QWIPs) based on bound-to-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 44; no. 1; pp. 45 - 50
Main Authors: Gunapala, S D, Park, J S, Sarusi, G, Lin, True-Lon, Liu, J K, Maker, P D, Muller, R E, Shott, C A, Hoelter, T
Format: Journal Article
Language:English
Published: 01-01-1997
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Summary:In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/Al(x)Ga(1-x)As quantum well infrared photodetectors (QWIPs) based on bound-to-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a 15-mum cutoff 128x128 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (NEDeltaT) of 30 mK has been achieved
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-1
ISSN:0018-9383
DOI:10.1109/16.554790