A 1/3-in 510(H)x 492(V) CCD image sensor with mirror imagefunction
A 1/3-in optical format 510(H)x492(V) interline charge-coupled-device (CCD) image sensor with a mirror-image function has been developed. To realize both a normal image and a mirror image, the horizontal shift register (H-CCD) is transferred forward and backward by a four-electrode, quasi-two-phase...
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Published in: | IEEE transactions on electron devices Vol. 38; no. 5; pp. 954 - 959 |
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Main Authors: | , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
01-05-1991
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Online Access: | Get full text |
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Summary: | A 1/3-in optical format 510(H)x492(V) interline charge-coupled-device (CCD) image sensor with a mirror-image function has been developed. To realize both a normal image and a mirror image, the horizontal shift register (H-CCD) is transferred forward and backward by a four-electrode, quasi-two-phase clock drive. The unit cell size is 9.6(H)x7.5(V) mum(2). An on-chip microlens has been developed to achieve a sensitivity of 28 mV/lx, which is higher than that of the conventional 1/2-in device. The hole accumulation diode (HAD) sensor used has the advantage of low dark current, negligibly small lag, high blooming suppression, and a variable-speed electronic shutter. The smear reduction level is -83 dB. Horizontal resolution of 330 TV lines is obtained |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1 |
ISSN: | 0018-9383 |
DOI: | 10.1109/16.78364 |