RF CMOS on high-resistivity substrates for system-on-chip applications

• Published in: IEEE transactions on electron devices Vol. 50; no. 3; pp. 567 - 576
• Main Authors: Benaissa, K, Yang, Jau-Yuann, Crenshaw, D, Williams, B, Sridhar, S, Ai, J., Boselli, G, Zhao, Song, Tang, Shaoping, Shichijo, H S
• Format: Journal Article
• Language: English
• Published: 01-03-2003
• ISSN: 0018-9383
• DOI: 10.1109/TED/2003.810470

The use of a high-resistivity substrate extends the capability of standard digital CMOS technology to enable the integration of high-performance RF passive components. The impact of substrate resistivity on the key components of RF CMOS for system-on-chip (SoC) applications is discussed. The comparison includes the transistor, transmission line, inductor, capacitor and varactor, as well as the noise isolation. We also discuss the integration issues including latch-up and well-well isolation in a 0.35-micron Cu metal pitch, 0.1-micron-gate-length RF CMOS technology. (Author)