Thermoelectric power and d.c. conductivity of co-evaporated Mn/SiO sub(x) cermet thin films

Thermoelectric power and d.c. conductivity of co-evaporated Mn/SiO sub(x) cermet thin films

The thermoelectric power and d.c. conductivity of Mn/SiO sub(x) thin films containing 10 at.% Mn have been measured between 278 and 578 K as a function of substrate temperature (293-418 K). Thermoelectric power and d.c. electrical conductivity measurements suggest that over the temperature range 278...

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Bibliographic Details
Published in:Thin solid films Vol. 256; no. 1-2; pp. 120 - 123
Main Authors: Zaidi, S Z A, Beynon, J, Steele, C B, Orton, B R
Format: Journal Article
Language:English
Published: 01-01-1995
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Summary:The thermoelectric power and d.c. conductivity of Mn/SiO sub(x) thin films containing 10 at.% Mn have been measured between 278 and 578 K as a function of substrate temperature (293-418 K). Thermoelectric power and d.c. electrical conductivity measurements suggest that over the temperature range 278-500 K, conduction is due to delocalised electrons at the Fermi level and electrons in donar localised states. For temperatures above 500 K, hole conduction takes place via extended states.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0040-6090