Critical-layer thickness of a pseudomorphic In(0.8)Ga(0.2)As heterostructure grown on InP
A very high electron mobility pseudomorphic In(0.8)Ga(0.2)As heterostructure is successfully grown on InP both by the elimination of the overshoot of flux densities and by the precise control of the flux ratio through a new calibration technique of reflection high-energy electron diffraction oscilla...
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| Published in: | Applied physics letters Vol. 58; pp. 2420 - 2422 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
27-05-1991
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| Online Access: | Get full text |
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| Summary: | A very high electron mobility pseudomorphic In(0.8)Ga(0.2)As heterostructure is successfully grown on InP both by the elimination of the overshoot of flux densities and by the precise control of the flux ratio through a new calibration technique of reflection high-energy electron diffraction oscillations in a molecular beam epitaxy system. The critical- layer thickness for the pseudomorphic growth of InGaAs on InP is found to follow the energy balance model, and a very high two-dimensional electron gas mobility of over 1.5 sq m/V s and over 15 sq m/V s at 293 and 10 K, respectively, is obtained. (Author) |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1 |
| ISSN: | 0003-6951 |