Residual infrared absorption in as-grown and annealed crystals of Ti:Al sub(2)O sub(3)

• Published in: IEEE journal of quantum electronics Vol. 24; no. 6; pp. 1003 - 1008
• Main Authors: Aggarwal, R L, Sanchez, A, Stuppi, M M, Fahey, R E, Strauss, A J, Rapoport, W R, Khattak, C P
• Format: Journal Article
• Language: English
• Published: 01-01-1988
• ISSN: 0018-9197

Data for as-grown and partially oxidized samples of Ti:Al sub(2)O sub(3) grown by the vertical-gradient-freeze technique show that the residual infrared absorption in these samples is largely due to Ti super(3+)-Ti super(4+) pairs. In agreement with this pair model, the residual absorption in as-grown samples has been substantially decreased by annealing in a reducing atmosphere. Data for an as-grown crystal grown by the heat exchanger method indicate the presence of a second mechanism for residual absorption that may set a lower limit on the ratio of this absorption to the Ti super(3+) absorption used to pump laser emission.