New self-aligned recessed-gate InP MESFET

New self-aligned recessed-gate InP MESFET

The authors describe a new self-aligned recessed-gate InP MESFET. In this structure, material selective and anisotropic etching properties of InP/InGaAsP system are utilized to alleviate the difficulties associated with channel recess and gate alignment. Using this technique a 1- mu m A1-gate InP ME...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. ED-3; no. 6; pp. 840 - 841
Main Authors: Cheng, C L, Coldren, L A, Miller, B I, Liao, A S H, Leheny, R F, Lalevic, B
Format: Journal Article
Language:English
Published: 01-01-1984
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Summary:The authors describe a new self-aligned recessed-gate InP MESFET. In this structure, material selective and anisotropic etching properties of InP/InGaAsP system are utilized to alleviate the difficulties associated with channel recess and gate alignment. Using this technique a 1- mu m A1-gate InP MESFET with a transconductance similar to 110 mS/mm is demonstrated.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0018-9383