Preparation of amorphous silicon films by chemical vapor deposition from higher silanes Si/n/H/2n + 2/ /n greater than 1

Amorphous silicon films have been prepared by chemical vapor deposition from higher silanes Si(n)H2(n + 2) (n greater than 1) in the temperature range 380-500 C. The films show electrical properties comparable to those prepared by the plasma discharge of silanes. Gold Schottky devices were fabricate...

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Bibliographic Details
Published in:	Applied physics letters Vol. 39; pp. 436 - 438
Main Authors:	Gau, S C, Weinberger, B R, Akhtar, M, Kiss, Z, MacDiarmid, A G
Format:	Journal Article
Language:	English
Published:	01-09-1981
Online Access:	Get full text
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Summary:	Amorphous silicon films have been prepared by chemical vapor deposition from higher silanes Si(n)H2(n + 2) (n greater than 1) in the temperature range 380-500 C. The films show electrical properties comparable to those prepared by the plasma discharge of silanes. Gold Schottky devices were fabricated with internal short-circuit currents of 12 mA/sq cm under AM 1 illumination over an area of 2.0 sq cm.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1
ISSN:	0003-6951