Light-controlled resistive switching in laser-assisted annealed Ba sub(0.8)Sr sub(0.2)TiO sub(3) thin films

• Published in: Physica status solidi. A, Applications and materials science Vol. 213; no. 4; pp. 1082 - 1087
• Main Authors: Silva, JPB, Kamakshi, Koppole, Sekhar, K C, Moreira, JAgostinho, Almeida, A, Pereira, M, Gomes, MJM
• Format: Journal Article
• Language: English
• Published: 01-04-2016
• Subjects: Annealing; Charge distribution; Cracks; Data storage; Devices; Illumination; Switching; Thin films; White light
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201532636

In this work, Ba sub(0.8)Sr sub(0.2)TiO sub(3) (BST)/ITO structures were grown on glass substrate and laser assisted annealing (LAA) was performed to promote the crystallization of BST. Atomic force microscopy and X-ray diffraction studies confirm the crack free and polycrystalline perovskite phase of BST. White light controlled resistive switching (RS) effect in Au/BST/ITO device is investigated. The device displays the electroforming-free bipolar RS characteristics and are explained by the modulation of the width and height of barrier at the BST/ITO interface via ferroelectric polarization. Moreover, the RS effect is significantly improved under white light illumination compared to that in the dark. The enhanced RS and photovoltaic effects are explained by considering depolarization field and charge distribution at the interface. The devices exhibit stable retention characteristics with low currents ( less than or equal to mu A), which make them attractive for non volatile memory devices.