Disorder- and correlation-induced charge carriers localization in oxyborate MgFeBO sub(4), Mg sub(0.5)Co sub(0.5)FeBO sub(4), CoFeBO sub(4) single crystals

• Published in: Journal of alloys and compounds Vol. 642; pp. 232 - 237
• Main Authors: Knyazev, Yu V, Kazak, N V, Platunov, M S, Ivanova, N B, Bezmaternykh, L N, Arauzo, A, Bartolome, J, Ovchinnikov, S G
• Format: Journal Article
• Language: English
• Published: 05-09-2015
• Subjects: Activation energy; Atomic structure; Conduction heating; Correlation; Density; Electronics; Localization; Position (location)
• ISSN: 0925-8388
• DOI: 10.1016/j.jallcom.2015.04.056

The temperature dependence of the resistivity of single crystalline Mg sub(1-x)Co sub(x)FeBO sub(4) samples with x = 0.0, 0.5, 1.0 is investigated for the temperature range (210-400 K). The conduction was found to be governed by Mott variable-range hopping (VRH) in the low-temperature range (T = 210-270 K) and by thermo-activation mechanism in the high-temperature range (T = 280-400 K). Microscopic electronic parameters, such as the density of the localized states near the Fermi level, localization length, the hopping length, and the activation energy have been obtained. The change of the activation energy observed at high-temperature range was attributed to local structure distortions around Fe and Co atoms. The complicated behavior of charge transfer mechanisms is discussed based on two approaches: atomic disorder and electron correlations.