Simulation of TaN sub(x)deposition by Reactive PVD

Simulation of TaN sub(x)deposition by Reactive PVD

The subject of this paper is the extension of the simulation tool T2 for the application to Reactive Physical Vapor Deposition. The implemented models are briefly described and applied to the deposition of TaN sub(x)barriers. The influence of the nitrogen flow and the substrate bias on the depositio...

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Bibliographic Details
Published in:Microelectronic engineering Vol. 87; no. 10; pp. 1907 - 1913
Main Authors: Wolf, H, Streiter, R, Friedemann, M, Belsky, P, Bakaeva, O, Letz, T, Gessner, T
Format: Journal Article
Language:English
Published: 01-10-2010
Subjects:
Barriers
Computer simulation
Deposition
Mathematical models
Microelectronics
Physical vapor deposition
Variability
Online Access:Get full text
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Summary:The subject of this paper is the extension of the simulation tool T2 for the application to Reactive Physical Vapor Deposition. The implemented models are briefly described and applied to the deposition of TaN sub(x)barriers. The influence of the nitrogen flow and the substrate bias on the deposition rate, the thickness uniformity, and the film composition is discussed.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0167-9317
DOI:10.1016/j.mee.2009.11.044