Effect of sulfurization in hydrogen sulfide on the properties of Cu(In,Ga)Se sub(2) thin-film absorbers

• Published in: Journal of materials science. Materials in electronics Vol. 24; no. 11; pp. 4530 - 4534
• Main Authors: Zou, Peng, Wan, Lei, Pan, Shuhao, Meng, Mingming, Guo, Zhiqiang, Xu, Jinzhang
• Format: Journal Article
• Language: English
• Published: 01-11-2013
• Subjects: Diffraction; Materials science; Phases; Raman scattering; Spectrometers; Sulfurization; Thin films; Vibration mode; X-rays
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-013-1437-2

In this research Cu(In,Ga)Se sub(2) thin films were sulfurized in H sub(2)S-Ar gas mixture with processing temperatures ranging from 400 to 550 degree C and time ranging from 10 to 60 min. The change in crystal phases, microstructure and chemical compositions of the absorber layers after sulfurization were investigated by X-ray diffraction, high resolution TEM, scanning electron microscopy, Raman scattering spectrum, energy dispersive X-ray spectrometer. In the process of sulfurization, the crystallinity and sulfurization degree of the Cu(In,Ga)(S,Se) sub(2) films depend strongly on the sulfurization temperature. The 'Cu-Au' phase was found for samples grown at low sulfurization temperature and transformed to chalcopyrite-type phase at high sulfurization temperature. The Se-S vibration mode of Cu(S,Se) alloy was also observed in the Raman spectra.