InAs/InP Quantum-Dot Passively Mode-Locked Lasers for 1.55-[mu] m Applications

• Published in: IEEE journal of selected topics in quantum electronics Vol. 17; no. 5; p. 1292
• Main Authors: Rosales, Ricardo, Merghem, Kamel, Martinez, Anthony, Akrout, A, Tourrenc, J.-P, Accard, Alain, Lelarge, Francois, Ramdane, Abderrahim
• Format: Journal Article
• Language: English
• Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01-09-2011
• ISSN: 1077-260X; 1558-4542
• DOI: 10.1109/JSTQE.2011.2116772

This paper reports on recent results on passively mode-locked InAs/InP quantum-dot-based lasers. These low-dimensional structures have proved very attractive in improving most of the properties of these devices. Subpicosecond pulse generation at repetition rates up to beyond 300 GHz has readily been demonstrated. Ultranarrow RF linewidths reach record values of less than 1 kHz. Controlled optical feedback allows a further reduction of this linewidth yielding extremely low timing jitter. A comparison of single-section and standard two-section lasers is given for the first time. These performances open the way to various applications at 1.55 μm, including very high bit rate all-optical signal processing, frequency comb generation, radio over fiber, and low-noise all-optical oscillators.