The effects of fluorine on parametrics and reliability in a 0.18-[mu]m 3.5/6.8 nm dual gate oxide CMOS technology

The effects of fluorine on parametrics and reliability in a 0.18-[mu]m 3.5/6.8 nm dual gate oxide CMOS technology

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 48; no. 7; p. 1346
Main Authors: Hook, T.B, Adler, E, Guarin, F, Lukaitis, J, Rovedo, N, Schruefer, K
Format: Journal Article
Language:English
Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01-07-2001
Online Access:Get full text
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Description
ISSN:0018-9383
1557-9646
DOI:10.1109/16.930650