GaN MMICs for Millimeter-Wave Front Ends

• Main Author: Sonnenberg, Timothy Adam
• Format: Dissertation
• Language: English
• Published: ProQuest Dissertations & Theses 01-01-2024
• Subjects: Computer Engineering; Electrical engineering; Electromagnetics
• ISBN: 9798382717289

The body of work presented in this thesis addresses the need for higher-power W-band MMIC circuits to enable communications, radar and sensing at millimeter waves were spectrum allocation is still growing and evolving. This work is funded by the DARPA millimeter wave GaN maturation (MGM) program aiming to scale GaN devices and models for use in amplification and mixed signal circuits. To address the goal of the program, designs of fundamental front end circuits for functions including frequency translation, power amplification (PA), low noise amplification (LNA) and control are realized using 40nm GaN-on-SiC HEMTs. Integration of these different MMIC circuit components is explored to additionally determine the accuracy of the models in a system level operation.Demonstrated GaN MMIC circuits in the HRL T3 process at W-band include a three stage power-combined balanced amplifier, two frequency doublers, a balanced frequency tripler, 90º and 180º phase shifters, a three stage LNA and an on-chip T/R half duplex front end. The design methodology, device selection, device characterization, MMIC layout and measurement of each of these circuits is analyzed and discussed. A single-HEMT resistive mixer, power detector and full W-band Dicke radiometer are also designed and fabricated but remain to be measured. Results show viable high-performing GaN HEMT MMIC circuits which can be implemented in existing applications to increase power density and performance.