Self-driven carbon atom implantation into fullerene embedding metal–carbon cluster

Hundreds of members have been synthesized and versatile applications have been promised for endofullerenes (EFs) in the past 30 y. However, the formation mechanism of EFs is still a long-standing puzzle to chemists, especially the mechanism of embedding clusters into charged carbon cages. Here, base...

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Published in:Proceedings of the National Academy of Sciences - PNAS Vol. 119; no. 39; p. 1
Main Authors: Guan, Runnan, Chen, Zuo-Chang, Huang, Jing, Tian, Han-Rui, Xin, Jinpeng, Ying, Si-Wei, Chen, Muqing, Zhang, Qianyan, Li, Qunxiang, Xie, Su-Yuan, Zheng, Lan-Sun, Yang, Shangfeng
Format: Journal Article
Language:English
Published: Washington National Academy of Sciences 27-09-2022
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Summary:Hundreds of members have been synthesized and versatile applications have been promised for endofullerenes (EFs) in the past 30 y. However, the formation mechanism of EFs is still a long-standing puzzle to chemists, especially the mechanism of embedding clusters into charged carbon cages. Here, based on synthesis and structures of two representative vanadium–scandium–carbido/carbide EFs, VSc2C@Ih (7)-C80 and VSc2C2@Ih (7)-C80, a reasonable mechanism-C1 implantation (a carbon atom is implanted into carbon cage)-is proposed to interpret the evolution from VSc2C carbido to VSc2C2 carbide cluster. Supported by theoretical calculations together with crystallographic characterization, the single electron on vanadium (V) in VSc2C@Ih (7)-C80 is proved to facilitate the C1 implantation. While the V=C double bond is identified for VSc2C@Ih (7)-C80, after C1 implantation the distance between V and C atoms in VSc2C2@Ih (7)-C80 falls into the range of single bond lengths as previously shown in typical V-based organometallic complexes. This work exemplifies in situ self-driven implantation of an outer carbon atom into a charged carbon cage, which is different from previous heterogeneous implantation of nonmetal atoms (Group-V or -VIII atoms) driven by high-energy ion bombardment or high-pressure offline, and the proposed C1 implantation mechanism represents a heretofore unknown metal–carbon cluster encapsulation mechanism and can be the fundamental basis for EF family genesis.
ISSN:0027-8424
1091-6490
DOI:10.1073/pnas.220256311