Proposal for Common Active 1.3-[Formula Omitted]m Quantum Dot Electroabsorption Modulated DFB Laser

Opportunities for the monolithic integration of a novel common quantum dot (QD)-active electroabsorption modulated laser are explored. An electric-field and temperature-dependent spectroscopic study of optical absorption and gain are presented in the state-of-the-art 1.3-[Formula Omitted] In(Ga)As/G...

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Bibliographic Details
Published in:IEEE photonics technology letters Vol. 31; no. 6; p. 419
Main Authors: Sobhani, Soroush A, Stevens, Ben J, Babazadeh, Nasser, Takemasa, Keizo, Nishi, Kenichi, Sugawara, Mitsuru, Hogg, Richard A, Childs, David T D
Format: Journal Article
Language:English
Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01-01-2019
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Summary:Opportunities for the monolithic integration of a novel common quantum dot (QD)-active electroabsorption modulated laser are explored. An electric-field and temperature-dependent spectroscopic study of optical absorption and gain are presented in the state-of-the-art 1.3-[Formula Omitted] In(Ga)As/GaAs QD active material. The unique gain/absorption spectral shape, attributed to the QD’s density of states, allows for a number of possible modulation schemes dependent upon the selected laser wavelength detuning from the gain peak. Intensity modulation and change in absorption, leading to negative chirp operation, are demonstrated via absorption spectroscopy and gain measurement of eight-layer-stack QD-active material. Such a device would be able to provide positive or negative chirp dependent upon modulation scheme and gain/Bragg wavelength detuning.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2018.2890641