Photoluminescent properties of nc-Si/SiO x nanosystems

In this work the nc-Si/SiOx nanosystems were obtained on the silicon substrate by means of evaporation of silicon powder in an oxidizing atmosphere. Then deposited SiOx films were irradiated from 226Ra isotope and were annealed at 1000 °C to grow nc-Si. By means of the ellipsometric technique we stu...

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Bibliographic Details
Published in:	Applied nanoscience pp. 1 - 6
Main Authors:	Olenych, Igor B, Monastyrskii, Liubomyr S, Boyko, Yaroslav V, Luchechko, Andriy P, Kostruba, Andriy M
Format:	Journal Article
Language:	English
Published:	Heidelberg Springer Nature B.V 01-02-2018
Subjects:	Annealing Ellipsometry Irradiation Light emission Optical properties Oxidation Photoluminescence Photon emission Radium 226 Silicon substrates
Online Access:	Get full text
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Summary:	In this work the nc-Si/SiOx nanosystems were obtained on the silicon substrate by means of evaporation of silicon powder in an oxidizing atmosphere. Then deposited SiOx films were irradiated from 226Ra isotope and were annealed at 1000 °C to grow nc-Si. By means of the ellipsometric technique we studied the effect of annealing duration and irradiation on the optical characteristics of nc-Si/SiOx films. It was found that irradiation of obtained films promotes visible photoluminescence witdh maximum near 740 nm. More effective photon emission is caused by the change of nc-Si passivation conditions. Obtained experimental and theoretical results show the important influence of the Si/SiOx interface on the light emitting properties of nc-Si.
ISSN:	2190-5509 2190-5517
DOI:	10.1007/s13204-018-0701-4