Two-dimensional model of a large area, inductively coupled, retangular plasma source for chemical vapor deposition

Two-dimensional model of a large area, inductively coupled, retangular plasma source for chemical vapor deposition

A novel design for an inductively coupled, rectangular plasma source is described.

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Bibliographic Details
Published in:IEEE transactions on plasma science Vol. 27; no. 5; p. 1317
Main Authors: Giuliani, John L, Shamamian, Vasgen A, Thomas, Raymond E, Apruzese, John P
Format: Journal Article
Language:English
Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01-10-1999
Subjects:
Chemicals
Diamonds
Electromagnetism
Plasma
Online Access:Get full text
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Description
Summary:A novel design for an inductively coupled, rectangular plasma source is described.
ISSN:0093-3813
1939-9375