Ammonothermal synthesis of GaN using Ba(NH^sub 2^)^sub 2^ as mineralizer

Ammonothermal synthesis of GaN using Ba(NH^sub 2^)^sub 2^ as mineralizer

It is demonstrated that hexagonal GaN can be obtained under ammonothermal conditions (125 MPa and 723 K) using Ba(NH2)2 as mineralizer. The hexagonal wurtzite-type GaN crystallites are several µm in diameter, as examined by scanning electron microscopy. This is to our knowledge the first successful...

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Bibliographic Details
Published in:Journal of crystal growth Vol. 456; p. 2
Main Authors: Hertrampf, J, Alt, NSA, Schlücker, E, Knetzger, M, Meissner, E, Niewa, R
Format: Journal Article
Language:English
Published: Amsterdam Elsevier BV 15-12-2016
Subjects:
Chemical synthesis
Crystallites
Gallium
Scanning electron microscopy
Semiconductors
Strontium
Wurtzite
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Summary:It is demonstrated that hexagonal GaN can be obtained under ammonothermal conditions (125 MPa and 723 K) using Ba(NH2)2 as mineralizer. The hexagonal wurtzite-type GaN crystallites are several µm in diameter, as examined by scanning electron microscopy. This is to our knowledge the first successful ammonothermal GaN synthesis using an alkaline-earth metal as mineralizer. Ba[Ga(NH2)4]2 was identified as intermediate species in the ammonothermal synthesis process. The formation of h-GaN using Sr(NH2)2 as mineralizer was indicated only at higher temperatures above 1000 K.
ISSN:0022-0248
1873-5002