Surface-Atom Core-Level Shift in GaAs(111)A-2×2

Guided by the known reconstruction of the GaAs(111)A-2x2 surface, the Ga 3d electron surface atom core-level shifts was found to be 0.30±0.01 eV and that of the surface As atoms with three-fold Ga coordination -0.25±0.01 eV. The four-fold coordinated As surface atoms were not resolved from the bulk...

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Bibliographic Details
Published in:	Journal of the Physical Society of Japan Vol. 81; no. 6; p. 1
Main Authors:	Pi, Tun-Wen, Chen, Bor-Rong, Huang, Mao-Lin, Chiang, Tsung-Hung, Wertheim, Gunther K, Hong, Minghwei, Kwo, Jueinai
Format:	Journal Article
Language:	English
Published:	Tokyo The Physical Society of Japan 01-06-2012
Subjects:	Atoms & subatomic particles Electrons Kinetics
Online Access:	Get full text
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Summary:	Guided by the known reconstruction of the GaAs(111)A-2x2 surface, the Ga 3d electron surface atom core-level shifts was found to be 0.30±0.01 eV and that of the surface As atoms with three-fold Ga coordination -0.25±0.01 eV. The four-fold coordinated As surface atoms were not resolved from the bulk line. Measureable surface effects are confined to the outermost mixed Ga and As layer. The effective spin-orbit ratios are typically below the standard value of 2/3 at kinetic energies near threshold. This phenomenon is related to final state of the excited photo-electron. The inelastic mean-free path was found to average 4 A with a minimum near a kinetic energy of 80 eV.
ISSN:	0031-9015 1347-4073