Multiferroic 0.8BiFeO^sub 3^-0.2BaTiO^sub 3^ Thin Films Prepared by Pulsed Laser Deposition

Multiferroic 0.8BiFeO^sub 3^-0.2BaTiO^sub 3^ Thin Films Prepared by Pulsed Laser Deposition

... thin films on (111) oriented Pt/TiO2/SiO2/Si substrates were prepared by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been studied and optimized to get better quality films. Based on the X-ray diffraction analysis, single phase...

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Bibliographic Details
Published in:Ferroelectrics Vol. 454; no. 1; p. 47
Main Authors: Kim, Kyung Man, Hwang, Sung-Ok, Yoon, Dong Jin, Koo, Chang Young, Lee, Hee Young
Format: Journal Article
Language:English
Published: Philadelphia Taylor & Francis Ltd 01-01-2013
Subjects:
Crystal structure
Dielectric properties
Oxygen
Perovskite
Substrates
Thin films
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Summary:... thin films on (111) oriented Pt/TiO2/SiO2/Si substrates were prepared by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been studied and optimized to get better quality films. Based on the X-ray diffraction analysis, single phase perovskite films were obtained at the deposition temperature of 700...C and an oxygen partial pressure of 10 mTorr and 330 mTorr. The BFO-BTO film deposited under higher oxygen pressure, i.e. 330 mTorr, showed smaller leakage current in electrical property, (010) preferred orientation in crystal structure, and enhanced ferromagnetic property compared to the film deposited at 10 mTorr. From our results, we suggest ... solid solution thin film for one of candidates to resolving the current poor dielectric property of single BFO multiferroic thin film by a partial substitution of Ba and Ti ions for Bi and Fe sites of BiFeO3 structure, respectively. (ProQuest: ... denotes formulae/symbols omitted.)
ISSN:0015-0193
1563-5112