Growth and Characterization of Na^sub 0.5^Bi^sub 0.5^TiO^sub 3^ Thin Films with BaTiO^sub 3^ Buffer Layer (Study of Au/Na^sub 0.5^Bi^sub 0.5^TiO^sub 3^/BaTiO^sub 3^/Pt Capacitor)

• Published in: Ferroelectrics Vol. 447; no. 1; p. 46
• Main Authors: Daryapurkar, A S, Kolte, J T, Gopalan, P
• Format: Journal Article
• Language: English
• Published: Philadelphia Taylor & Francis Ltd 01-01-2013
• Subjects: Chemical compounds; Dielectric properties; Ferroelectrics; Lasers; Sodium; Thin films
• ISSN: 0015-0193; 1563-5112

Lead free bilayer capacitor structure has been fabricated as a combination of sodium bismuth titanate (Na^sub 0.5^Bi^sub 0.5^)TiO^sub 3^ (NBT) thin films with barium titanate, (BaTiO^sub 3^ (BT) buffer layer in situ using pulsed laser deposition (PLD). PLD control parameters have been optimized using Taguchi approach to obtain good quality NBT and BT thin films. It has been observed that dielectric properties of NBT thin films enhanced by inserting BT buffer layer. This improvement in the dielectric properties of NBT thin films have been discussed in relation to the effect of the buffer layer on the structure, microstructure and interface of the NBT/BT multilayer capacitor. [PUBLICATION ABSTRACT]