Silicon oxide enhanced Schottky gate In0.53Ga0.47AsFET's with a self-aligned recessed gate structure

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Bibliographic Details
Published in:	IEEE electron device letters Vol. 5; no. 12; pp. 511 - 514
Main Authors:	CHENG, C. L, LIAO, A. S. H, CHANG, T. Y, CARIDI, E. A, COLDREN, L. A, LALEVIC, B
Format:	Journal Article
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 1984
Subjects:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Field effect transistor Gallium Indium Arsenides Mixed Silicon Oxides Self aligned gate technology
Online Access:	Get full text
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ISSN:	0741-3106 1558-0563