Two-step annealing technique for leakage current reduction in chemical-vapor-deposited Ta2O5 film

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Bibliographic Details
Published in:	IEEE electron device letters Vol. 10; no. 11; pp. 514 - 516
Main Authors:	SHINRIKI, H, NAKATA, M, NISHIOKA, Y, MUKAI, K
Format:	Journal Article
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 1989
Subjects:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Microelectronic fabrication Tantalum V Oxides Leakage current Thermal annealing Chemical vapor deposition Thin film
Online Access:	Get full text
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ISSN:	0741-3106 1558-0563