Large lateral photovoltaic effect in modulation doped AlGa As/GaAs heterostructures

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Bibliographic Details
Published in:	Applied physics letters Vol. 55; no. 8; pp. 792 - 794
Main Authors:	TABATABAIE, N, MEYNADIER, M.-H, NAHORY, R. E, HARBISON, J. P, FLOREZ, L. T
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 1989
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics Minority carrier Temperature Photovoltaic effect Semiconductor materials Excitation intensity Doping Aluminium Gallium Arsenides Mixed Theoretical study Two dimensional model Modulation doping Experimental study Inorganic compound Gallium Arsenides Transmission line Charge carrier recombination Illumination Models Electron gas Heterojunction Charge carrier injection
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ISSN:	0003-6951 1077-3118