Comparative study of AIN dielectric films' electrical properties for MEMS capacitive switches

• Published in: Microelectronic engineering Vol. 130; pp. 69 - 73
• Main Authors: KOUTSOURELI, M, ADIKIMENAKIS, A, MICHALAS, L, PAPANDREOU, E, STAVRINIDIS, G, KONSTANTINIDIS, G, GEORGAKILAS, A, PAAIOANNOU, G
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 2014
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectric properties of solids and liquids; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronics; Exact sciences and technology; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Mechanical instruments, equipment and techniques; Micro- and nanoelectromechanical devices (mems/nems); Micromechanical devices and systems; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Polarization; Unsteady state; Leakage currents; Discharge charge cycle; Transients; Cathode sputtering; Relaxation; Microelectronic fabrication; RF MEMS switches; Molecular beam epitaxy; Activation energy; Microelectromechanical device; Stretching; Dielectric charging; Electrical characteristic; Temperature dependence; Voltage dependence; Vacancies; Electrical properties; Dielectric properties; Aluminium; Steady state; Order degree; Thermal activation; Dielectric thin films; Transport processes; Comparative study; Aluminum nitride
• ISSN: 0167-9317; 1873-5568