Chemical beam epitaxy growth of tensile-strained GaAsP/GaAlAs quantum well heterostructures for laser application

Chemical beam epitaxy growth of tensile-strained GaAsP/GaAlAs quantum well heterostructures for laser application

Saved in:
Bibliographic Details
Published in:Journal of crystal growth Vol. 175-76; pp. 1265 - 1269
Main Authors: GARCIA, J. C, LEBKIRI, A, FILY, A, COLLOT, P, MASSIES, J, LEROUX, M
Format: Conference Proceeding
Language:English
Published: Amsterdam Elsevier 1997
Subjects:
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Optics
Physics
Semiconductor lasers; laser diodes
Aluminium arsenides
Gallium arsenides
Inorganic compounds
Ternary compounds
Quantum wells
Photoluminescence
Experimental study
Laser diodes
Precursor
Contamination
Characterization
Thin films
Gallium phosphides
Multilayers
Solid solutions
Chemical beam epitaxy
Chemical composition
III-V semiconductors
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
ISSN:0022-0248
1873-5002