Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric : Reliability of Micro-Interconnects in 3D IC Packages

• Published in: Microelectronics and reliability Vol. 53; no. 1; pp. 17 - 29
• Main Authors: FRANK, T, MOREAU, S, CHAPPAZ, C, LEDUC, P, ARNAUD, L, THUAIRE, A, CHERY, E, LORUT, F, ANGHEL, L, POUPON, G
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier 2013
• Subjects: Applied sciences; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Integrated circuits; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Electric breakdown; Thermal cycle; Durability; Degradation; Transport process; Microelectronic fabrication; Dielectric test; Interconnection; Back end of line technology; Integrated circuit; Electrodiffusion; Silicon; Void; Copper; Reliability; Damaging; Via hole
• ISSN: 0026-2714; 1872-941X