Explanation of threshold voltage scaling in enhancement-mode InAIN/AIN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates

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Bibliographic Details
Published in:	Thin solid films Vol. 520; no. 19; pp. 6230 - 6232
Main Authors:	ALEXEWICZ, A, OSTERMAIER, C, HENKEL, C, BETHGE, O, CARLIN, J.-F, LUGANI, L, GRANDJEAN, N, BERTAGNOLLI, E, POGANY, D, STRASSER, G
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier 2012
Subjects:	Applied sciences Cross-disciplinary physics: materials science; rheology Electronics Exact sciences and technology Materials science Other semiconductors Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Specific materials Transistors Voltage threshold Interlayers High electron mobility transistor (HEMT) Aluminium nitride InAIN/GaN heterostructure Normally-off Leakage currents Gallium nitride III-V compound Interfaces Zirconium oxide Gate oxide Gallium tellurides Scaling laws Drain current Logic gates Enhancement-mode (E-mode) High electron mobility transistors Gates Heterostructures III-V semiconductors
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