Explanation of threshold voltage scaling in enhancement-mode InAIN/AIN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates

Explanation of threshold voltage scaling in enhancement-mode InAIN/AIN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates

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Bibliographic Details
Published in:Thin solid films Vol. 520; no. 19; pp. 6230 - 6232
Main Authors: ALEXEWICZ, A, OSTERMAIER, C, HENKEL, C, BETHGE, O, CARLIN, J.-F, LUGANI, L, GRANDJEAN, N, BERTAGNOLLI, E, POGANY, D, STRASSER, G
Format: Journal Article
Language:English
Published: Amsterdam Elsevier 2012
Subjects:
Applied sciences
Cross-disciplinary physics: materials science; rheology
Electronics
Exact sciences and technology
Materials science
Other semiconductors
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
Transistors
Voltage threshold
Interlayers
High electron mobility transistor (HEMT)
Aluminium nitride
InAIN/GaN heterostructure
Normally-off
Leakage currents
Gallium nitride
III-V compound
Interfaces
Zirconium oxide
Gate oxide
Gallium tellurides
Scaling laws
Drain current
Logic gates
Enhancement-mode (E-mode)
High electron mobility transistors
Gates
Heterostructures
III-V semiconductors
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Description
ISSN:0040-6090
1879-2731