A Low Power Inductorless LNA With Double Gm Enhancement in 130 nm CMOS

Saved in:

Bibliographic Details
Published in:	IEEE journal of solid-state circuits Vol. 47; no. 5; pp. 1094 - 1103
Main Authors:	BELMAS, François, HAMEAU, Frédéric, FOURNIER, Jean-Michel
Format:	Conference Proceeding
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 2012
Subjects:	Amplifiers Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Performance evaluation Noise figure Prototype ISM band Differential amplifier Third order Low noise amplifier Microwave Inductorless Implementation Intercept point Complementary MOS technology GHz low power MOS transistor Low-power electronics Gain LNA
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
ISSN:	0018-9200 1558-173X