M-Plane Core―Shell InGaN/GaN Multiple-Quantum-Welis on GaN Wires for Electroluminescent Devices

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Bibliographic Details
Published in:	Nano letters Vol. 11; no. 11; pp. 4839 - 4845
Main Authors:	KOESTER, Robert, HWANG, Jun-Seok, TCHERNYCHEVA, Maria, DURAND, Christophe, EYMERY, Joël, SALOMON, Damien, XIAOJUN CHEN, BOUGEROL, Catherine, BARNES, Jean-Paul, DANG, Daniel Le Si, RIGUTTI, Lorenzo, DE LUNA BUGALLO, Andres, JACOPIN, Gwénolé
Format:	Journal Article
Language:	English
Published:	Washington, DC American Chemical Society 2011
Subjects:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science; rheology Electron states Electronics Exact sciences and technology Level splitting and interactions Materials Materials science Nanoscale materials and structures: fabrication and characterization Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum wells Spin-orbit coupling, zeeman, stark, and strain splitting, jahn-teller effect Core shell structure Quantum wells Electroluminescent devices Photoluminescence Multiple quantum well Quantum effect Secondary ion mass spectrometry Stark effect Gallium nitride III-V compound Light emission MOVPE method Indium nitride Scanning transmission electron microscopy Nanostructured materials III-V semiconductors
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ISSN:	1530-6984 1530-6992